SK Hynix Begins Supplying Samples of Next-Generation AI-Oriented Memory “HBM4E” with 12-Layer Stacking
Source：
www.egsea.com
SK hynix announced on the 18th that it has begun supplying 12-layer HBM4E samples to major customers. This next-generation, ultra-high-performance DRAM is designed for artificial intelligence (AI) applications. With a maximum pin speed of 16 Gbps and over 20% improved energy efficiency, it enhances data processing capabilities essential for AI training and inference.
